Sic mosfet gate driver


















The overcurrent limit is programmable by selecting the appropriate values of the sense resistor RS. The block Control converts the PWM voltage signals into optical signals for the fiber-optic interface of the driver. On the other hand the status feedback fiber-optic signal is converted into the electrical signal SO. The main function of the block Driver is explained with Fig.

Here the Over-Voltage Detection is realized with a chain of TVS diodes that feeds into the gate and additionally gives a feedback to the ACL-pin of the gate driver core 2SC in case of drain-source-voltages higher than a static value of approximately V during the turn-off transient.

The dynamic peak value of the resulting drain-source voltage during turn-off is always a bit higher due to the response time of the TVS chain. For the following measurements it is not used but can be helpful to reduce the maximum drain-source-voltage slope for instance in case of the over-voltage detection is not responding fast enough.

By this the drain- current slope is reduced and thus the over-voltage peak during turning-off over- or short-circuit currents. The constantly existing noise in power electronic circuits is filtered by a low-pass at the shunt resistor RS.

With this circuitry an adjustable over-current protection is realized. Measurements 3. The measurement signals depicted in Fig. Here the very fast reverse-recovery behavior of the SiC-Diode is obvious. The drain-source voltage is limited to approximately V. In Fig. In order to check the current-limit value for each value of the shunt resistor RS the load current is increased step by step.

The blue lines are showing the normal switching behavior without SSD. If the current is slightly increased the driver starts detecting the programmed overcurrent of approximately A and initiates the SSD.

Thus the green lines compared to the original blue ones are shifted to the left. An even higher current that is detected by the sense circuit leads to the behavior shown with the red lines. Latest update. All dates. Galvanically isolated 4 A dual gate driver Suitable for mid and high power applications such as power conversion and industrial motor drivers inverters.

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The capacitance variations are converted into the gate charge time as the new aging-sensitive parameter. The new parameter measurement circuit is proposed and integrated into the gate driver module. The study results indicate that the new parameter varies noticeably with gate-oxide degradation and the difference of this parameter caused by junction temperature is much smaller than that caused by degradation.

Besides, the parameter is immune to package degradation and load current.



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